PtSe2 film on SiO2/Si

CVD grown PtSe₂ film

Depending on the number of layers, PtSe₂ converts from semiconductor to semimetal with a bandgap ranging from 0 to 1.2 eV, which is a promising material for several applications such as gas sensing, photovoltaic, and photodetector applications etc. [Zhao, Yuda, et al. “High‐electron‐mobility and air‐stable 2D layered PtSe2 FETs.” Advanced Materials 29.5 (2017): 1604230.] We grow high-quality ultrathin PtSe₂ film on various substrates. The quality of the grown PtSe₂ film by our growth method is confirmed using several complementary characterization techniques, such as optical microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, etc.

Key characteristics:

• Thickness: Based on AFM imaging, the thickness and surface roughness was precisely measured. The thickness of the PtSe₂ film can be tuned in the range of 1nm~ 20 nm.

As grown

Standard Substrates: SiO₂ on Si, c-plane Sapphire, Quartz (fused silica), Gold Single Crystal, Gold Foil

Customized samples:

We can provide PtSe₂ film grown or transferred onto your choice of the substrate (e.g. Flexible substrates, silicon waveguides, optical fibers etc.). Contact our experts via your login page dashboard to discuss the options. Additional costs involved for customization services

References:

Cite the papers here