Heterostructure
MoS2
MoSe2
Pts2
Ptse2
VS2
WS2
WSe2
Catalog
Sapphire Wafer C-Plane Single, 2 inch
| ITEM | Test-Mp1 |
| Sapphire Wafers Specification | |
| Diameter | 50.8 mm |
| Diamater tol. | 0.1 mm |
| Size | / |
| Thickness |  About 400     μm |
| Thickness tol. | 25 μm |
| Orientation | C-plane (0001) |
| Orientation | C-plane |
| Lattice Parameter | a=4.785 Ã…, c=12.991 Ã… |
| Single side polished (SSP) | Ra < 0.5 nm; The reverse side of SSP wafer was fine ground to Ra = 0.8 – 1.2 um |
| Density | 3.98 g/cm3 |
| Total Thickness Variation (TTV) | <5 um |
| Finish | Single Side Polished |
| Bow | 10 μm |
| Warp | 10 μm |
| Thermal Expansion Coefficient | 6.66 x 10-6 / °C parallel to C axis, 5 x 10-6 /°C perpendicular to C axis |
| Dielectric Strength | 4.8 x 105 V/cm |
| Transmittance | 88% +/-1 % @460 nm (for DSP wafers) |
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